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NLMD5820 2.65 W Filterless Class-D Audio Amplifier with Integrated Dual SPST Switch
The NLMD5820 is an integrated mono Class-D audio power amplifier and dual SPST switch capable of delivering 2.65 W of continuous average power to 4.0 W from a 5.0 V supply in a Bridge Tied Load (BTL) configuration. Under the same conditions, the output power stage can provide 1.4 W to a 8.0 W BTL load with less than 1% THD+N. For cellular handsets or PDAs it offers space and cost savings because no output filter is required when using inductive tranducers. The NLMD5820 incorporates a dual SPST switch which allows signals to bypass the amplifier. The integrated switch operates off a separate supply voltage and maintains a very low RON resistance, 0.5 W max @ 2.8 V VCC. The NLMD5820 processes analog inputs with a pulse width modulation technique that lowers output noise and THD when compared to a conventional sigma-delta modulator. The device allows independent gain while summing signals from various audio sources. Thus, in cellular handsets, the earpiece, the loudspeaker and even the melody ringer can be driven with a single NLMD5820. Due to its low 42 mV noise floor, A-weighted, clean listening is guaranteed no matter the load sensitivity.
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16 1 16 PIN UDFN CASE 517AL A2A M G A2A M G
1
= Specific Device Code = Date Code/Assembly Location = Pb-Free Package
PIN CONNECTIONS
NC2 IN2 COM2 VCC SD VP INP INM
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
GND NC1 IN1 COM1 OUTM GND VP OUTP
* Optimized PWM Output Stage: Filterless Capability * Efficiency up to 90% * * * * * * * * * * * *
Low 2.5 mA Typical Quiescent Current Large Output Power Capability: 1.4 W with 8.0 W Load (CSP) and THD + N < 1% Dual SPST with 0.5 W Max RON @ VCC = 2.8 V High Performance, THD+N of 0.03% @ Vp = 5.0 V, RL = 8.0 W, Pout = 100 mW Excellent PSRR (-65 dB): No Need for Voltage Regulation Surface Mounted Package UDFN16 Fully Differential Design. Eliminates Two Input Coupling Capacitors Very Fast Turn On/Off Times with Advanced Rising and Falling Gain Technique External Gain Configuration Capability Internally Generated 250 kHz Switching Frequency Short Circuit Protection Circuitry "Pop and Click" Noise Protection Circuitry This is a Pb-Free Device
(Top View)
ORDERING INFORMATION
Device NLMD5820MUTAG Package Shipping
16 PIN 3000/Tape & Reel UDFN (Pb-Free)
Applications
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
* Cellular Phone * Portable Electronic Devices * PDAs and Smart Phones
(c) Semiconductor Components Industries, LLC, 2007
1
September, 2007 - Rev. 0
Publication Order Number: NLMD5820/D
NLMD5820
2.2 mF 100 nF
Rf Ci Ri INM BYPASS Required for Filtering the Audio Input Signal Ci Ri INP Vp BYPASS INTERNAL BIASING
Vp
VCC
Vp
OUTP RAMP GENERATOR Data Processor
OUTM BYPASS
GND Rf NC1 Positive Differential Input COM1 NC2 COM2 SD Vih IN2 IN1 Vil Shutdown Control GND
Figure 1. Functional Block Diagram
FUNCTION TABLE
IN 1, 2 0 1 NC 1, 2 ON OFF
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2
RL = 8 W
Negative Differential Input
NLMD5820
PIN DESCRIPTION
Pin No. 1 2 3 4 5 Symbol NC2 IN2 COM2 VCC SD Type I/O I I/O I I Normally Closed Signal Line for Switch #2. Control Input for Switch #2. Common Signal Line for Switch #2. Analog Supply for Switches. Range: 1.65 V - 4.5 V. The device enters in Shutdown Mode when a low level is applied on this pin. An internal 300 kW resistor will force the device in shutdown mode if no signal is applied to this pin. It also helps to save space and cost. Power Analog Positive Supply. Range: 2.5 V - 5.5 V. Positive Differential Input. Negative Differential Input. Positive BTL Output. Analog Positive Supply. Range: 2.5 V - 5.5 V. Analog Ground. Negative BTL Output. Common Signal Line for Switch #1. Control Input for Switch #1. Normally Closed Signal Line for Switch #1. Analog Ground. Description
6 7 8 9 10 11 12 13 14 15 16
Vp INP INM OUTP Vp GND OUTM COM1 IN1 NC1 GND
I I I O I I O I/O I I/O I
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NLMD5820
MAXIMUM RATINGS
Symbol Vp Vin VCC VIS VIN Iout Ianl1 Ianl-pk1 Iclmp Pd TJ Tstg RqJA MSL Supply Voltage for Amplifier Input Voltage for Amplifier Supply Voltage for Switches Analog Signal Voltage for Switches (VNC, or VCOM) Control Input for Switches Max Output Current of Amplifier (Note 1) Continuous DC Current from COM to NC Peak Current from COM to NC, 10 Duty Cycle Continuous DC Current into COM/NC with Respect to VCC or GND Power Dissipation (Note 2) Max Junction Temperature Storage Temperature Range Thermal Resistance Junction-to-Air ESD Protection Human Body Model (HBM) (Note 3) Machine Model (MM) (Note 4) Latchup Current @ TA = 85C (Note 5) Moisture Sensitivity (Note 6) UDFN16 UDFN16 Rating Active Mode Shutdown Mode Max 6.0 7.0 -0.3 to VCC +0.3 -0.5 to +5.5 -0.5 v VIS v VCC + 0.5 -0.5 v VIN v +5.5 1.5 300 500 100 Internally Limited 150 -65 to +150 50 > 2000 > 200 100 Level 1 Unit V V V V V A mA mA mA C C C/W V
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The device is protected by a current breaker structure. See "Current Breaker Circuit" in the Description Information section for more information. 2. The thermal shutdown is set to 160C (typical) avoiding irreversible damage to the device due to power dissipation. 3. Human Body Model: 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114. 4. Machine Model: 200 pF discharged through all pins following specification JESD22/A115. 5. Latchup Testing per JEDEC Standard JESD78. 6. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J-STD-020A.
RECOMMENDED OPERATING CONDITIONS
Symbol VP VCC VIS VIN TA Supply Voltage for Amplifier Supply Voltage for Switches Analog Signal Voltage for Switches Control Input for Switches Operating Ambient Temperature Parameter Range 2.5 to 5.5 1.65 to 4.5 GND to VCC GND to VCC -40 to +85 Unit V V V V C
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NLMD5820
ELECTRICAL CHARACTERISTICS OF AMPLIFIER (Limits apply for TA = +25C unless otherwise noted)
Characteristic Supply Quiescent Current Symbol Idd Conditions Vp = 3.6 V, RL = 8.0 W Vp = 5.5 V, No Load Vp from 2.5 V to 5.5 V, No Load TA = -40C to +85C Vp = 4.2 V TA = +25C TA = +85C Vp = 5.5 V TA = +25C TA = +85C Shutdown Voltage High Shutdown Voltage Low Switching Frequency Gain Output Impedance in Shutdown Mode Resistance from SD to GND Output Offset Voltage Turn On Time Turn Off Time Thermal Shutdown Temperature Output Noise Voltage Vsdih Vsdil Fsw G ZSD Rs Vos Ton Toff Tsd Vn Vp from 2.5 V to 5.5 V TA = -40C to +85C RL = 8.0 W Vp = 5.5 V Vp from 2.5 V to 5.5 V Vp from 2.5 V to 5.5 V Vp = 3.6 V, f = 20 Hz to 20 kHz no weighting filter with A weighting filter RL = 8.0 W, f = 1.0 kHz, THD+N < 1% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V RL = 8.0 W, f = 1.0 kHz, THD+N < 10% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V RL = 4.0 W, f = 1.0 kHz, THD+N < 1% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V RL = 4.0 W, f = 1.0 kHz, THD+N < 10% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V Efficiency RL = 8.0 W, f = 1.0 kHz Vp = 5.0 V, Pout = 1.2 W Vp = 3.6 V, Pout = 0.6 W RL = 4.0 W, f = 1.0 kHz Vp = 5.0 V, Pout = 2.0 W Vp = 3.6 V, Pout = 1.0 W Min 1.2 180 285 kW Ri Typ 2.15 2.61 0.42 0.45 0.8 0.9 240 300 kW Ri 20 300 6.0 1.0 1.0 160 65 42 0.22 0.33 0.45 0.67 0.92 0.36 0.53 0.76 1.07 1.49 0.24 0.38 0.57 0.83 1.2 0.52 0.8 1.125 1.58 2.19 87 87 79 78 Max 3.8 mA 0.8 2.0 mA 1.5 0.4 300 315 kW Ri W W W W % V V kHz V V kW kW mV ms ms C mVrms Unit mA
Shutdown Current
Isd
RMS Output Power
Po
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NLMD5820
ELECTRICAL CHARACTERISTICS OF AMPLIFIER (Limits apply for TA = +25C unless otherwise noted)
Characteristic Total Harmonic Distortion + Noise Symbol THD+N Conditions Vp = 5.0 V, RL = 8.0 W, f = 1.0 kHz, Pout = 0.25 W Vp = 3.6 V, RL = 8.0 W, f = 1.0 kHz, Pout = 0.25 W Vp from 2.5 V to 5.5 V Vic = 0.5 V to Vp - 0.8 V Vp = 3.6 V, Vic = 1.0 Vpp f = 217 Hz f = 1.0 kHz Vp_ripple_pk-pk = 200 mV, RL = 8.0 W, Inputs AC Grounded Vp = 3.6 V f = 217 kHz f = 1.0 kHz Min Typ 0.05 0.06 -62 -56 -57 Max dB dB Unit %
Common Mode Rejection Ratio
CMRR
Power Supply Rejection Ratio
PSRR
-
-62 -65
-
DC ELECTRICAL CHARACTERISTICS OF SWITCHES
Characteristic Control Input High Voltage Control Input Low Voltage Control Input Leakage Current ON State Leakage Current OFF State Leakage Current Quiescent Current ON Resistance RON Flatness RON Matching Symbol VIH VIL IIN ICOM(ON) INC(OFF) ICC RON RFLAT DRON VIN = VCC or GND 0 V < VCOM, VNC < VCC 0 V < VCOM, VNC < VCC All Channels ON or OFF, VIN = VCC or GND, IOUT =0 VCC = 3.0 V VCC = 4.2 V VCC = 3.0 V VCC = 4.2 V VCC = 3.0 V VCC = 4.2 V Conditions VCC = 3.0 V VCC = 4.2 V VCC = 3.0 V VCC = 4.2 V 0.1 10 5 1.0 0.4 0.35 0.16 0.11 0.05 0.05 Min 1.4 2.0 0.7 0.8 1.0 100 50 2.0 0.5 0.4 0.20 0.14 0.05 0.05 Typ Max Unit V V mA nA nA mA W W W W W W
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NLMD5820
AC ELECTRICAL CHARACTERISTICS OF SWITCHES (Input tr = tf = 3.0 ns)
Symbol tON tOFF CIN CNC CCOM BW Parameter Turn-On Time Turn-Off Time Control Pin Input Capacitance NC Port Capacitance COM Port Capacitance When Switch is Enabled Maximum On-Channel -3 dB Bandwidth or Minimum Frequency Response Maximum Feed-through On Loss Off-Channel Isolation Charge Injection Select Input to Common I/O Total Harmonic Distortion THD + Noise Channel-to-Channel Crosstalk Test Conditions RL = 50 W, CL = 35 pF (Figures 43 and 44) RL = 50 W, CL = 35 pF (Figures 43 and 44) VCC = 0 V VCC = 3.3 V, VIN = 0 V VCC = VIN = 3.3 V VIN centered between VCC and GND (Figure 45) Min Typ 50 30 3.5 60 200 19 Max Unit ns ns pF pF pF MHz
VONL VISO Q THD VCT
VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 45) f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF VIN centered between VCC and GND (Figure 45) VIN = VCC to GND, RIS = 0 W, CL = 1.0 nF Q = CL x DVOUT (Figure 46) FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF, VIS = 2.0 V RMS f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 W VIN centered between VCC and GND (Figure 45)
-0.06 -68 38 0.08 -70
dB dB pC % dB
Ci + Audio Input Signal -
Ri
NLMD5820
INP OUTM Load 30 kHz Low Pass Filter + Measurement Input
Ci
Ri INM VP OUTP GND
4.7 mF + Power Supply -
Figure 2. Test Setup for Typical Characteristics (Figures 3 - 34)
NOTES: 1. Unless otherwise noted, Ci = 100 nF and Ri= 150 kW. Thus, the gain setting is 2 V/V and the cutoff frequency of the input high pass filter is set to 10 Hz. Input capacitors are shorted for CMRR measurements. 2. To closely reproduce a real application case, all measurements are performed using the following loads: RL = 8 W means Load = 15 mH + 8 W + 15 mH RL = 4 W means Load = 15 mH + 4 W + 15 mH Very low DCR 15 mH inductors (50 mW) have been used for the following graphs. Thus, the electrical load measurements are performed on the resistor (8 W or 4 W) in differential mode. 3. For Efficiency measurements, the optional 30 kHz filter is used. An RC low-pass filter is selected with (100 W, 47 nF) on each PWM output.
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
100 90 DIE TEMPERATURE (C) 80 EFFICIENCY (%) 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 Pout (W) 0.8 1 Class AB Vp = 5 V RL = 8 W NLMD5820 100 90 80 70 60 50 40 30 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Pout (W) NLMD5820 Vp = 5 V RL = 8 W Class AB
Figure 3. Efficiency vs. Pout Vp = 5 V, RL = 8 W, f = 1 kHz
100 90 NLMD5820 DIE TEMPERATURE (C) 80 EFFICIENCY (%) 70 60 50 40 30 20 10 0 0 0.1 0.2 0.3 0.4 Pout (W) 0.5 0.6 0.7 Vp = 3.6 V RL = 8 W Class AB 60 55 50 45 40 35 30 25 20 0
Figure 4. Die Temperature vs. Pout Vp = 5 V, RL = 8 W, f = 1 kHz @ TA = +25C
Class AB
Vp = 3.6 V RL = 8 W
NLMD5820 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Pout (W)
Figure 5. Efficiency vs. P out Vp = 3.6 V, RL = 8 W, f = 1 kHz
90 80 70 EFFICIENCY % 60 50 40 30 20 10 0 0 0.5 1 Pout (W) 1.5 2 Vp = 5 V RL = 4 W Class AB DIE TEMPERATURE (C) NLMD5820 160 140 120 100 80 60 40 20 0
Figure 6. Die Temperature vs. P out Vp = 3.6 V, RL = 8 W, f = 1 kHz @ TA = +25C
Class AB
Vp = 5 V RL = 4 W
NLMD5820
0.5
1.0 Pout (W)
1.5
2.0
Figure 7. Efficiency vs. Pout Vp = 5 V, RL = 4 W, f = 1 kHz
Figure 8. Die Temperature vs. Pout Vp = 5 V, RL = 4 W, f = 1 kHz @ TA = +25C
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
90 80 70 EFFICIENCY % 60 50 40 30 20 10 0 0 0.2 0.4 0.6 Pout (W) 0.8 1 1.2 Vp = 3.6 V RL = 4 W Class AB DIE TEMPERATURE (C) NLMD5820 100 90 80 70 60 50 40 NLMD5820 30 20 0 0.2 0.4 0.6 Pout (W) 0.8 1.0 Vp = 3.6 V RL = 4 W Class AB
Figure 9. Efficiency vs. Pout Vp = 3.6 V, RL = 4 W, f = 1 kHz
10 Vp = 5.0 V RL = 8 W f = 1 kHz THD+N (%) 10
Figure 10. Die Temperature vs. Pout Vp = 3.6 V, RL = 4 W, f = 1 kHz @ TA = +25C
THD+N (%)
1.0
1.0
Vp = 4.2 V RL = 8 W f = 1 kHz
NLMD5820 0.1
NLMD5820 0.1
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Pout (W)
0.01 0
0.2
0.4
0.6 Pout (W)
0.8
1.0
1.2
Figure 11. THD+N vs. Pout Vp = 5 V, RL = 8 W, f = 1 kHz
10 Vp = 3.6 V RL = 8 W f = 1 kHz THD+N (%) 10
Figure 12. THD+N vs. Pout Vp = 4.2 V, RL = 8 W, f = 1 kHz
THD+N (%)
1.0
1.0
Vp = 3 V RL = 8 W f = 1 kHz
NLMD5820 0.1
NLMD5820 0.1
0.01 0 0.2 0.4 Pout (W) 0.6 0.8
0.01 0
0.1
0.2
0.3 Pout (W)
0.4
0.5
0.6
Figure 13. THD+N vs. Pout Vp = 3.6 V, RL = 8 W, f = 1 kHz
Figure 14. THD+N vs. Pout Vp = 3 V, RL = 8 W, f = 1 kHz
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
10 Vp = 2.5 V RL = 8 W f = 1 kHz THD+N (%) 1.0 NLMD5820 0.1 THD+N (%) 1.0 10 Vp = 5 V RL = 4 W f = 1 kHz
0.1
0.01 0
0.1
0.2 Pout (W)
0.3
0.4
0.01
0
0.5
1.0
1.5 Pout (W)
2.0
2.5
Figure 15. THD+N vs. Pout Vp = 2.5 V, RL = 8 W, f = 1 kHz
10 Vp = 4.2 V RL = 4 W f = 1 kHz THD+N (%) 10
Figure 16. THD+N vs. Pout Vp = 5 V, RL = 4 W, f = 1 kHz
THD+N (%)
1.0
1.0
Vp = 3.6 V RL = 4 W f = 1 kHz
0.1
0.1
0.01 0
0.5
1.0 Pout (W)
1.5
2.0
0.01 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pout (W)
Figure 17. THD+N vs. Pout Vp = 4.2 V, RL = 4 W, f = 1 kHz
10 Vp = 3 V RL = 4 W f = 1 kHz THD+N (%) THD+N (%) 10
Figure 18. THD+N vs. Pout Vp = 3.6 V, RL = 4 W, f = 1 kHz
Vp = 2.5 V RL = 4 W f = 1 kHz
1.0
1.0
0.1 0
0.2
0.4 Pout (W)
0.6
0.8
1.0
0.1 0
0.1
0.2
0.3 Pout (W)
0.4
0.5
0.6
Figure 19. THD+N vs. Power Out Vp = 3 V, RL = 4 W, f = 1 kHz
Figure 20. THD+N vs. Power Out Vp = 2.5 V, RL = 4 W, f = 1 kHz
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
2.0 RL = 8 W f = 1 kHz 1.5 Pout (W) Pout (W) NLMD5820 THD+N = 10% 1.0 NLMD5820 THD+N = 3% 0.5 0.5 0 2.5 0 2.5 2.0 1.5 1.0 THD+N = 1% THD+N = 10% 3.0 2.5 RL = 4 W f = 1 kHz
3.0
3.5
4.0
4.5
5.0
3.0
3.5
4.0
4.5
5.0
POWER SUPPLY (V)
POWER SUPPLY (V)
Figure 21. Output Power vs. Power Supply RL = 8 W @ f = 1 kHz
10 10
Figure 22. Output Power vs. Power Supply RL = 4 W @ f = 1 kHz
THD+N (%)
THD+N (%)
1.0 Vp = 2.5 V 0.1 Vp = 3.6 V Vp = 5 V
1.0 Vp = 2.5 V 0.1 Vp = 5 V Vp = 3.6 V
0.01 10
100
1000 FREQUENCY (Hz)
10000
100000
0.01 10
100
1000 FREQUENCY (Hz)
10000
100000
Figure 23. THD+N vs. Frequency RL = 8 W, Pout = 250 mW @ f = 1 kHz
-20 -30 -40 PSSR (dB) -50 -60 -70 -80 10 Vp = 5 V PSSR (dB) -20 -30 -40 -50 -60 Inputs to GND RL = 8 W 100 1000 FREQUENCY (Hz) 10000 100000 -70 -80 10
Figure 24. THD+N vs. Frequency RL = 4 W, Pout = 250 mW @ f = 1 kHz
Vp = 5 V
Vp = 3.6 V
Vp = 3.6 V Inputs to GND RL = 4 W 100 1000 FREQUENCY (Hz) 10000 100000
Figure 25. PSRR vs. Frequency Inputs Grounded, RL = 8 W, Vripple = 200 mvpkpk
Figure 26. PSRR vs. Frequency Inputs grounded, RL = 4 W, Vripple = 200 mVpkpk
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
-20 -30 -40 -50 -60 -70 -80 10 Vp = 3.6 V RL = 8 W QUIESCENT CURRENT (mA) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 120 130 140 TEMPERATURE (C) 150 160 Thermal Shutdown Vp = 3.6 V RL = 8 W
CMMR (dB)
100
1000 FREQUENCY (Hz)
10000
100000
Figure 27. PSRR vs. Frequency Vp = 3.6 V, RL = 8 W, Vic = 200 mvpkpk
900 SHUTDOWN CURRENT (nA) SHUTDOWN CURRENT (nA) 800 700 600 500 400 300 200 100 0 2.5 3.5 4.5 5.5 RL = 8 W 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2
Figure 28. Thermal Shutdown vs. Temperature Vp = 5 V, RL = 8 W,
RL = 8 W
1.0 2.5
3.5
4.5
5.5
POWER SUPPLY (V)
POWER SUPPLY (V)
Figure 29. Shutdown Current vs. Power Supply RL = 8 W
1000 Vp = 3.6 V RL = 8 W NOISE (mVrms) NOISE (mVrms) 1000
Figure 30. Quiescent Current vs. Power Supply RL = 8 W
Vp = 5 V RL = 8 W
100
No Weighting
100
No Weighting
With A Weighting
With A Weighting
10 10
100
1000
10000
10 10
100
1000
10000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 31. Noise Floor, Inputs AC Grounded with 1 mF Vp = 3.6 V
Figure 32. Noise Floor, Inputs AC Grounded with 1 mF Vp = 5 V
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NLMD5820
TYPICAL CHARACTERISTICS OF AMPLIFIER
11 TA = +85C TURN OFF TIME (mS) TURN ON TIME (mS) 10 TA = +25C 9 TA = -40C 8 7 TA = +25C 6 TA = +85C TA = -40C 8
5
7 6 2.5
3.5
4.5
5.5
4 2.5
3.5
4.5
5.5
POWER SUPPLY (V)
POWER SUPPLY (V)
Figure 33. Turn on Time
Figure 34. Turn off Time
TYPICAL CHARACTERISTICS OF SWITCHES
0 -10 -20 -30 XT (dB) BW (dB) -40 -50 -60 -70 -80 -90 -100 0.01 0.1 1 FREQUENCY (MHz) 10 100 -18 0.01 0.1 1 FREQUENCY (MHz) 10 100 -3 -6 -9 -12 -15 0
Figure 35. Cross Talk vs. Frequency @ VCC = 4.2 V
Figure 36. Bandwidth vs. Frequency
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NLMD5820
TYPICAL CHARACTERISTICS OF SWITCHES
0.12 0.1 0.08 THD (%) RON (W) 0.06 0.04 0.02 0 10 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 100 1000 FREQUENCY (Hz) 10000 100000 0 0 0.5 1 1.5 VIN (V) 2 2.5 3 -40C 85C 25C
Figure 37. Total Harmonic Distortion
0.4 0.35 0.3 85C 0.25 RON (W) RON (W) 0.2 25C -40C 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.05 0 0 0.5 1 1.5 2 VIN (V) 2.5 3 3.5 4 0.16 0.14 0
Figure 38. On-Resistance vs. Input Voltage @ VCC = 3.0 V
3.0 V
0.15 0.1
4.3 V
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VIN (V)
Figure 39. On-Resistance vs. Input Voltage @ VCC = 4.2 V
0 -10 -20 -30 ISOLATION (dB) -40 -50 -60 -70 -80 -90 -100 -110 -120 0.01 0.1 1
Figure 40. On-Resistance vs. Input Voltage
10
FREQUENCY @ VCC = 3.0 V (MHz)
Figure 41. Isolation vs. Frequency
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NLMD5820
DUT VCC 0.1 mF 50 W Output VOUT 35 pF 90% Output Input GND tBMM 90% of VOH VCC
Switch Select Pin GND
Figure 42. tBBM (Time Break-Before-Make)
VCC DUT VCC 0.1 mF Open Output VOUT 50 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50%
Figure 43. tON/tOFF
VCC DUT Output Open 50 W VOUT 35 pF Input
VCC 50% 0V VOH Output VOL 10% 10% 50%
Input
tOFF
tON
Figure 44. tON/tOFF
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NLMD5820
50 W Reference Input Output 50 W Generator 50 W DUT Transmitted
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz
VOUT for VIN at 100 kHz to 50 MHz VIN
Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W
Figure 45. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL
DUT Open Output VIN
VCC GND CL Output Off Off DVOUT
VIN
On
Figure 46. Charge Injection: (Q)
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NLMD5820
DESCRIPTION INFORMATION Detailed Description The basic structure of the amplifier portion of the NLMD5820 is composed of one analog pre-amplifier, a pulse width modulator and an H-bridge CMOS power stage. The first stage is externally configurable with gain-setting resistor Ri and the internal fixed feedback resistor Rf (the closed-loop gain is fixed by the ratios of these resistors) and the other stage is fixed. The load is driven differentially through two output stages. The differential PWM output signal is a digital image of the analog audio input signal. The human ear is a band pass filter regarding acoustic waveforms, the typical values of which are 20 Hz and 20 kHz. Thus, the user will hear only the amplified audio input signal within the frequency range. The switching frequency and its harmonics are fully filtered. The inductive parasitic element of the loudspeaker helps to guarantee a superior distortion value.
Power Amplifier
the fast turn on and off times, the shutdown signal can be used as a mute signal as well.
Turn On and Turn Off Transitions in Case of UDFN8
In case of UDFN8 package, the audio signal is established instantaneously after the rising edge on the shutdown pin. The audio is also suddenly cut once a low level is sent to the amplifier. This way to turn on and off the device in a very fast way also prevents from "pop & click" noise.
Shutdown Function
The device enters shutdown mode when the shutdown signal is low. During the shutdown mode, the DC quiescent current of the circuit does not exceed 1.5 mA.
Current Breaker Circuit
The output PMOS and NMOS transistors of the amplifier have been designed to deliver the output power of the specifications without clipping. The channel resistance (Ron) of the NMOS and PMOS transistors is typically 0.4 W.
Turn On and Turn Off Transitions in Case of 9 Pin Flip-Chip Package
In order to eliminate "pop and click" noises during transition, the output power in the load must not be established or cutoff suddenly. When a logic high is applied to the shutdown pin, the internal biasing voltage rises quickly and, 4 ms later, once the output DC level is around the common mode voltage, the gain is established slowly (5.0 ms). This method to turn on the device is optimized in terms of rejection of "pop and click" noises. Thus, the total turn on time to get full power to the load is 9 ms (typical). The device has the same behavior when it is turned-off by a logic low on the shutdown pin. No power is delivered to the load 5 ms after a falling edge on the shutdown pin. Due to
The maximum output power of the circuit corresponds to an average current in the load of 820 mA. In order to limit the excessive power dissipation in the load if a short-circuit occurs, a current breaker cell shuts down the output stage. The current in the four output MOS transistors are real-time controlled, and if one current exceeds the threshold set to 1.5 A, the MOS transistor is opened and the current is reduced to zero. As soon as the short-circuit is removed, the circuit is able to deliver the expected output power. This patented structure protects the NLMD5820. Since it completely turns off the load, it minimizes the risk of the chip overheating which could occur if a soft current limiting circuit was used.
Dual SPST Switch
The NLMD5820 features an integrated dual SPST analog switch. The control for the switch is operated independently of the amplifier, allowing the audio system a choice between routing signals through the amplifier or letting them pass unaffected through the switch. When the switch is open, it maintains significant off isolation to minimize the effects of the amplifier output on the system.
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NLMD5820
APPLICATION INFORMATION
NLMD5820 PWM Modulation Scheme
The NLMD5820 uses a PWM modulation scheme with each output switching from 0 to the supply voltage. If Vin = 0 V outputs OUTM and OUTP are in phase and no current is flowing through the differential load. When a positive
signal is applied, OUTP duty cycle is greater than 50% and OUTM is less than 50%. With this configuration, the current through the load is 0 A most of the switching period and thus power losses in the load are lowered.
OUTP
OUTM +Vp 0V -Vp
Load Current 0A
Figure 47. Output Voltage and Current Waveforms into an Inductive Loudspeaker DC Output Positive Voltage Configuration Voltage Gain
The first stage is an analog amplifier. The second stage is a comparator: the output of the first stage is compared with a periodic ramp signal. The output comparator gives a pulse width modulation signal (PWM). The third and last stage is the direct conversion of the PWM signal with MOS transistors H-bridge into a powerful output signal with low impedance capability. With an 8 W load, the total gain of the device is typically set to:
300 kW Ri Input Capacitor Selection (Cin)
The input coupling capacitor blocks the DC voltage at the amplifier input terminal. This capacitor creates a high-pass filter with Rin, the cut-off frequency is given by
Fc + 2 p 1 Ri Ci
An optional filter can be used for filtering high frequency signal before the speaker. In this case, the circuit consists of two inductors (15 mH) and two capacitors (2.2 mF). The size of the inductors is linked to the output power requested by the application. A simplified version of this filter requires a 1 mF capacitor in parallel with the load, instead of two 2.2 mF connected to ground). Cellular phones and portable electronic devices are great applications for Filterless Class-D as the track length between the amplifier and the speaker is short, thus, there is usually no need for an EMI filter. However, to lower radiated emissions as much as possible when used in filterless mode, a ferrite filter can often be used. Select a ferrite bead with the high impedance around 100 MHz and a very low DCR value in the audio frequency range is the best choice. The MPZ1608S221A1 from TDK is a good choice. The package size is 0603.
Optimum Equivalent Capacitance at Output Stage
. If the optional filter described in the above section isn't selected. Cellular phones and wireless portable devices design normally put several Radio Frequency filtering capacitors and ESD protection devices between Filter less Class D outputs and loudspeaker. Those devices are usually connected between amplifier output and ground. In order to achieve the best sound quality, the optimum value of total equivalent capacitance between each output terminal to the ground should be less than or equal to 150 pF. This total equivalent capacitance consists of the radio frequency filtering capacitors and ESD protection device equivalent parasitic capacitance.
When using an input resistor set to 150 kW, the gain configuration is 2 V/V. In such a case, the input capacitor selection can be from 10 nF to 1 mF with cutoff frequency values between 1 Hz and 100 Hz. The NLMD5820 also includes a built in low pass filtering function. It's cut off frequency is set to 20 kHz.
Optional Output Filter
This filter is optional due to the capability of the speaker to filter by itself the high frequency signal. Nevertheless, the high frequency is not audible and filtered by the human ear.
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NLMD5820
OUTM 15 mH OUTM 2.2 mF RL = 8 W 1.0 mF OUTP 15 mH 15 mH 15 mH RL = 8 W
2.2 mF OUTP
Figure 48. Advanced Optional Audio Output Filter
Figure 49. Optional Audio Output Filter
OUTM RL = 8 W
FERRITE CHIP BEADS OUTP
Figure 50. Optional EMI Ferrite Bead Filter
Cs
Differential Audio Input from DAC
Ri Ri
VP INP INM OUTM
Input from Microcontroller
SD
OUTP
GND
Figure 51. NLMD5820 Application Schematic with Fully Differential Input Configuration
Cs
Differential Audio Input from DAC
Ri Ri
VP INP INM FERRITE CHIP BEADS OUTM
Input from Microcontroller
SD
OUTP
GND
Figure 52. NLMD5820 Application Schematic with Fully Differential Input Configuration and Ferrite Chip Beads as an Output EMI Filter http://onsemi.com
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NLMD5820
Cs Ci Differential Audio Input from DAC Ci Input from Microcontroller SD OUTP Ri Ri VP INP INM FERRITE CHIP BEADS OUTM
GND
Figure 53. NLMD5820 Application Schematic with Differential Input Configuration and High Pass Filtering Function
Cs Ci Ri Ri Ci Input from Microcontroller SD OUTP VP INP INM OUTM
Single-Ended Audio Input from DAC
GND
Figure 54. NLMD5820 Application Schematic with Single Ended Input Configuration
Cs Ci Differential Audio Input from DAC Ci Input from Microcontroller SD OUTP Ri Ri VP INP INM FERRITE CHIP BEADS OUTM
GND
COM1 COM2
NC1 NC2
Figure 55. NLMD5820 Application Schematic Using Switches as Optional Bypass
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NLMD5820
PACKAGE DIMENSIONS
UDFN16 3.2x2.4, 0.4P CASE 517AL-01 ISSUE O
A B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.13 REF 0.15 0.25 3.20 BSC 2.70 2.90 2.40 BSC 1.00 1.20 0.40 BSC 0.20 --0.30 0.50
D
L
DETAIL A OPTIONAL CONSTRUCTION 2X SCALE
2X
0.10 C
2X
0.10 C
0.05 C
16X
0.05 C
NOTE 4
16X
L
16X
K
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
EEEE EEEE
DETAIL B
PIN ONE REFERENCE
E
(A3)
TOP VIEW (A3) A
A1 DETAIL B OPTIONAL CONSTRUCTION 4X SCALE
SIDE VIEW
A1
C
SEATING PLANE
SOLDERING FOOTPRINT*
2.90
D2
1 8
DETAIL A
2.70 E2
16X 16
1.20
1
16X
0.24 0.40 PITCH
DIMENSIONS: MILLIMETERS
e
9 16X
0.63 b 0.10 C A B 0.05 C
NOTE 3
e/2 BOTTOM VIEW
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NLMD5820/D

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